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| BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. * Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features (3) http://onsemi.com (2) (1) Q1 Q2 (4) (5) (6) * Pb-Free Package is Available 6 DIAGRAM MARKING SOT-363 CASE 419B STYLE 1 MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc 1xm 1 1x = Specific Device Code x = B, F, L m = Date Code Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device BC846BDW1T1 BC847BDW1T1 Package SOT-363 SOT-363 SOT-363 (Pb-Free) SOT-363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR-5 Board (Note 1) TA = 25C Derate Above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1. FR-5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW BC847BDW1T1G BC848CDW1T1 3.0 RqJA TJ, Tstg 328 -55 to +150 mW/C C/W C For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2004 1 June, 2004 - Rev. 3 Publication Order Number: BC846BDW1T1/D BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO BC846 BC847 BC848 V(BR)CES BC846 BC847 BC848 V(BR)CBO BC846 BC847 BC848 V(BR)EBO BC846 BC847 BC848 ICBO 6.0 6.0 5.0 - - - - - - - - - - 15 5.0 nA mA 80 50 30 - - - - - - V 80 50 30 - - - - - - V 65 45 30 - - - - - - V V Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) Collector -Base Breakdown Voltage (IC = 10 mA) Emitter -Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE BC846B, BC847B BC848C BC846B, BC847B BC848C VCE(sat) VBE(sat) VBE(on) - - 200 420 - - - - 580 - 150 270 290 520 - - 0.7 0.9 660 - - - 450 800 0.25 0.6 - - 700 770 - (IC = 2.0 mA, VCE = 5.0 V) Collector -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector -Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base -Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base -Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base -Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz) V V mV fT Cobo NF 100 - - - - - - 4.5 10 MHz pF dB http://onsemi.com 2 BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 TYPICAL CHARACTERISTICS - BC847 & BC848 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10 Figure 1. Normalized DC Current Gain 2.0 TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 1.0 Figure 2. "Saturation" and "On" Voltages VCE , COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/ C) -55C to +125C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Collector Saturation Region 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 Figure 4. Base-Emitter Temperature Coefficient 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 1.0 VCE = 10 V TA = 25C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 3 BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 TYPICAL CHARACTERISTICS - BC846 1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25C 2.0 1.0 0.5 0.2 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TA = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 7. Normalized DC Current Gain Figure 8. "On" Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TA = 25C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA VB, TEMPERATURE COEFFICIENT (mV/ C) 2.0 -1.0 -1.4 -1.8 qVB for VBE -2.2 -55C to 125C 0.8 0.4 -2.6 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 -3.0 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient TA = 25C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 500 VCE = 5 V TA = 25C 200 100 50 20 2.0 0.1 0.2 0.5 1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 100 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 4 BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 1.0 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.05 0.02 0.01 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 t, TIME (ms) 1.0 k 10 k 100 k 1.0 M ZqJA(t) = r(t) RqJA RqJA = 328C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.1 Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25C TJ = 25C 3 ms -10 -5.0 -2.0 -1.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Figure 14. Active Region Safe Operating Area http://onsemi.com 5 BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 PACKAGE DIMENSIONS SOT-363 (SC-88) CASE 419B-02 ISSUE T A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) M B N M DIM A B C D G H J K N S J C STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 BC846BDW1T1/D |
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